jiangsu changjiang ele c tron ics technology co., l t d t o -220 -3l /t o -220f plastic-encap sulate mosfets cjp10n60,CJPF10N60 n-ch ann el power mosfet description the c j p10n60/CJPF10N60 is a high volt age and high current powe r mosfet , design ed to ha ve c haracterist ics , such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugg ed avala n che characteristics. this power mosfet is usually used at high speed switching applications in power sup p lies, pwm motor controls, high ef ficient dc to dc conver ters and brid ge circuit s . fea tures z low c rss z fast s witching z 100% avalanche tested maximum ra tings (t a =25 unless ot her w ise not ed) para mete r symbol v a lue unit drain-s ourc e voltag e v ds 600 gate-source v o ltag e v gs 30 v conti nuo us dr ain c u rrent i d 10 a po w e r diss i p a tion p d 2 w t hermal resist ance from jun c tion to ambie n t r ja 62.5 /w junctio n t e mperature t j 150 storage t e mperature t st g -50 ~+150 1. ga t e 2. drain 3. source 1. ga te 3.source 2.drai n t o -220 -3l /to-220f c,mar,2014 http://
electrical charact eristics (t a =25 unless other w ise noted) para mete r sy mbol te s t conditi o n min ty p max unit drain-s ourc e breakd o w n v o l t age v (b r) ds s v gs = 0v, i d = 250a 600 gate-t hreshol d voltag e (note 1 ) v gs( t h) v ds =v gs , i d = 250a 2.0 4.0 v gate-bod y l e a k age c u rrent ( note1) i gss v ds =0 v, v gs =30v 10 0 na z e ro gate voltage dr ain c u rr ent i ds s v ds = 600v, v gs =0 v 10 a drain-s ourc e on-state resis t ance (note 1 ) r d s ( on) v gs = 10v, i d =5a 1 ? input cap a cita nce c iss 143 0 output cap a cit ance c oss 117 revers e t r ansfer capac itanc e c rss v ds = 25v,v gs =0 v, f =1mhz 2.2 pf t u rn-on delay t i me t d ( on) 46 rise t ime t r 74 t u rn-off delay t i me t d( o f f ) 340 fall t i me t f v dd = 325v, i d =10 a , r g =2 5 ? 66 n s f o r w a r d o n vol t age(n o te1) v sd v gs =0 v, i s =1 0 a 1.4 v no tes: 1. pulse t e st : pulse wid t h 3 00s, dut y c y c l e 2 %. c,mar,2014
0123 4567 0 2 4 6 8 10 12 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e- 3 0.01 0.1 1 10 24681012 0 1 2 3 4 5 6 7 246810 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10203040 0 2 4 6 8 10 v ds =50v puls ed drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eri s t i cs t a =100 t a =25 i d =250ua t hr e s hol d vol t a ge t hresho ld vo lt ag e v th (v) junction tem perature t j ( ) puls ed source current i s (a) source to drain voltage v sd (v) v sd i s ? ? t a =100 t a =25 pulsed i d =5a r ds( o n) ?? v gs o n - r esist ance r ds ( o n) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 puls ed o n - r esist ance r ds ( o n) ( ) drain current i d (a) i d ?? r ds( o n) v gs =10v 1 v gs =5v puls ed cjp /pf 10n60 typical characteristics o u t p u t c h aract eri s t i cs drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =4.5v c,mar,2014
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